STW12NM60N
MOSFET N-CH 600V 10A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW12NM60N is a high-voltage N-Channel MOSFET from the MDmesh™ series. This device offers a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain current (Id) of 10A at 25°C, with a maximum power dissipation of 90W (Tc). Featuring a low Rds(on) of 410mOhm at 5A and 10V, and a gate charge (Qg) of 30.5 nC at 10V, this component is designed for efficient switching applications. It utilizes advanced MOSFET technology and is housed in a TO-247-3 through-hole package. The operating temperature range is -55°C to 150°C (TJ). This component finds application in power supply units, industrial motor control, and lighting systems.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 410mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 50 V |