STW12NK95Z
MOSFET N-CH 950V 10A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH™ STW12NK95Z is a high-voltage N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 950 V and a continuous drain current (Id) of 10 A at 25°C (Tc), with a maximum power dissipation of 230 W (Tc). The STW12NK95Z offers a low on-resistance (Rds On) of 900 mOhm maximum at 5 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 113 nC maximum at 10 V and input capacitance (Ciss) of 3500 pF maximum at 25 V. This MOSFET is housed in a TO-247-3 through-hole package, suitable for robust power management solutions. Its operating temperature range is -55°C to 150°C (TJ). This component is utilized in industries such as power supplies, industrial motor control, and high-voltage switching applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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