STW12NK60Z
MOSFET N-CH 600V 10A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STW12NK60Z is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 10A at 25°C (Tc). With a maximum power dissipation of 150W (Tc), it is suitable for demanding power conversion tasks. The device exhibits a low on-resistance (Rds On) of 640mOhm at 5A and 10V gate drive. Key parameters include input capacitance (Ciss) of 1740pF at 25V and gate charge (Qg) of 59nC at 10V. The STW12NK60Z is packaged in a TO-247-3 through-hole configuration and operates reliably up to a junction temperature of 150°C. This MOSFET is commonly utilized in power supplies, industrial automation, and lighting control systems.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 640mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1740 pF @ 25 V |
Request a Quote
Clients Also Buy
STN1NK60Z
MOSFET N-CH 600V 300MA SOT223
STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
