STW12N170K5
MOSFET N-CH 1700V 5A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics MDmesh™ K5 series STW12N170K5 is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 5 A at 25°C, with a maximum power dissipation of 250 W (Tc). The device offers a low on-resistance (Rds On) of 2.9 Ohm maximum at 2.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 37 nC maximum at 10 V and input capacitance (Ciss) of 1380 pF maximum at 100 V. The STW12N170K5 utilizes a TO-247-3 through-hole package and operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for power factor correction (PFC) and switched-mode power supply (SMPS) designs across industrial, renewable energy, and electric vehicle sectors.
Additional Information
Series: MDmesh™ K5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 100 V |
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