STW120NF10
MOSFET N-CH 100V 110A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ II N-Channel Power MOSFET, part number STW120NF10, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 110A at 25°C (Tc). With a maximum power dissipation of 312W (Tc) and a low on-resistance of 10.5mOhm at 60A and 10V gate-source voltage, this device is optimized for high-efficiency power switching applications. The STW120NF10 features a gate charge of 233 nC (Max) at 10V, and an input capacitance of 5200 pF (Max) at 25V. Its TO-247-3 through-hole package ensures robust thermal management. This component is suitable for industrial power supplies, automotive electronics, and high-power motor control systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 312W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 233 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |
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