STW11NB80
MOSFET N-CH 800V 11A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW11NB80 is an N-Channel Power MOSFET from the PowerMESH™ series, available in a TO-247-3 package. This device offers a high drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 11A at 25°C. With a maximum power dissipation of 190W (Tc), it is suitable for applications requiring robust high-voltage switching. Key parameters include a low on-resistance (Rds On) of 800mOhm at 5.5A and 10V, a gate charge (Qg) of 70 nC at 10V, and input capacitance (Ciss) of 2900 pF at 25V. The operating junction temperature range is up to 150°C. This component is commonly utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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