STV300NH02L
MOSFET N-CH 24V 200A 10POWERSOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ III STV300NH02L is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vds) of 24V and a continuous drain current (Id) of 200A at 25°C, with a maximum power dissipation of 300W (Tc). The device exhibits a low on-resistance (Rds On) of 1mOhm at 80A and 10V, facilitated by its 10V typical gate drive. Key electrical characteristics include a maximum gate charge (Qg) of 109 nC at 10V and input capacitance (Ciss) of 7055 pF at 15V. The STV300NH02L is housed in a 10-PowerSO package with an exposed bottom pad, suitable for surface mounting. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in industries such as automotive, industrial power supplies, and electric vehicle systems.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 10-PowerSO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7055 pF @ 15 V |