STV270N4F3
MOSFET N-CH 40V 270A 10POWERSOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ III STV270N4F3 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 40 V. This device offers a continuous drain current (Id) of 270 A at 25°C (Tc) and a maximum power dissipation of 300 W (Tc). The on-resistance (Rds On) is specified at a maximum of 1.5 mOhm at 80 A and 10 V gate-source voltage. Featuring a gate charge (Qg) of 150 nC maximum at 10 V and input capacitance (Ciss) of 7500 pF maximum at 25 V, this component utilizes Metal Oxide technology. The STV270N4F3 is housed in a 10-PowerSO exposed bottom pad package for surface mounting and operates within a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in power management applications across automotive and industrial sectors.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 10-PowerSO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
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