STV250N55F3
MOSFET N-CH 55V 200A 10POWERSOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ III STV250N55F3 is a high-performance N-channel Power MOSFET designed for demanding applications. This surface-mount component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 200A at 25°C, with a maximum power dissipation of 300W (Tc). The low on-resistance (Rds On) of 2.2mOhm at 75A and 10V gate-source voltage ensures efficient power transfer. Key electrical characteristics include a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 6800 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is housed in a 10-PowerSO package with an exposed bottom pad, suitable for industrial and automotive power management systems.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 10-PowerSO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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