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STV240N75F3

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STV240N75F3

MOSFET N-CH 75V 240A 10POWERSO

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STripFET™ III STV240N75F3 is an N-channel Power MOSFET designed for high-power applications. This device features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 240A at 25°C case temperature, with a maximum power dissipation of 300W (Tc). The STV240N75F3 exhibits a low on-resistance of 2.6mOhm maximum at 120A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 6800 pF at 25V. This component is housed in a 10-PowerSO surface mount package with an exposed bottom pad, suitable for demanding thermal management. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in industries requiring robust power switching solutions.

Additional Information

Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerSO-10 Exposed Bottom Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 120A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package10-PowerSO
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6800 pF @ 25 V

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