STV200N55F3
MOSFET N-CH 55V 200A 10POWERSOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STV200N55F3. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 200A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The Rds(On) is specified at a maximum of 2.5mOhm at 75A and 10V gate drive. The STV200N55F3 utilizes a Surface Mount 10-PowerSO package with an exposed bottom pad, offering a robust thermal solution. Key electrical characteristics include a Vgs(th) of 4V at 250µA and a typical input capacitance (Ciss) of 6800pF at 25V drain-source voltage. With a maximum junction temperature of 175°C, this MOSFET is designed for high-power applications across various industries including automotive, industrial power, and renewable energy systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 10-PowerSO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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