STV160NF03LT4
MOSFET N-CH 30V 160A 10POWERSOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ STV160NF03LT4 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) rating of 160A at 25°C. The device exhibits a low on-resistance (Rds On) of 2.8mOhm maximum at 80A and 10V gate-source voltage, contributing to reduced conduction losses. With a maximum power dissipation of 210W at 25°C (Tc), it is suitable for demanding thermal environments. The gate charge (Qg) is 140 nC maximum at 10V, and input capacitance (Ciss) is 4700 pF maximum at 25V. This MOSFET is available in a surface mount 10-PowerSO package with an exposed bottom pad for enhanced thermal performance. The STV160NF03LT4 is utilized across various industries including automotive and industrial power systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 10-PowerSO |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V |
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