STV160NF03LAT4
MOSFET N-CH 30V 160A 10POWERSOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STV160NF03LAT4, is a 30 V device designed for high-power applications. This surface-mount component features a 160A continuous drain current at 25°C and a maximum power dissipation of 210W (Tc). The low on-resistance of 3mOhm at 80A and 10V gate drive facilitates efficient power switching. Key parameters include a gate charge of 160 nC at 10V and input capacitance of 5350 pF at 25V. Operating at junction temperatures up to 175°C, this MOSFET is suitable for demanding applications across automotive and industrial power management sectors. The PowerSO-10 package with an exposed bottom pad ensures effective thermal management.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 10-PowerSO |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5350 pF @ 25 V |
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