STV160NF02LT4
MOSFET N-CH 20V 160A 10POWERSOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ II N-Channel Power MOSFET, part number STV160NF02LT4, offers a 20V Drain-Source voltage and a continuous drain current of 160A at 25°C (Tc). This surface mount device, packaged in a 10-PowerSO with an exposed bottom pad, features a low on-resistance of 2.5mOhm at 80A and 10V Vgs. The maximum power dissipation is 210W (Tc), and it operates at temperatures up to 175°C (TJ). Key parameters include a gate charge of 160 nC at 10V and input capacitance of 4800 pF at 15V. The device supports gate drive voltages of 5V and 10V, with a maximum Vgs of ±15V. This component is utilized in applications such as automotive and industrial power management.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 10-PowerSO |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 15 V |
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