STV160NF02LAT4
MOSFET N-CH 20V 160A 10POWERSOManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STV160NF02LAT4, is a 20V device in a PowerSO-10 exposed bottom pad package. This surface-mount component offers a continuous drain current of 160A at 25°C and a maximum power dissipation of 210W. Key electrical characteristics include a low on-resistance of 2.7mOhm at 80A and 10V, and a maximum gate charge of 175 nC at 10V. Input capacitance (Ciss) is specified at 5500 pF maximum at 15V. The device operates at junction temperatures up to 175°C and supports gate-source voltages up to ±15V. This MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 10-PowerSO |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 15 V |
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