STULED656
MOSFET N-CH 650V 6A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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This STMicroelectronics N-Channel MOSFET, part number STULED656, features a 650V drain-source breakdown voltage and a continuous drain current rating of 6A at 25°C (Tc). With a maximum on-resistance of 1.3Ohm at 2.7A and 10V Vgs, it offers efficient switching. The TO-251 (IPAK) package with through-hole mounting facilitates integration into power systems. Key electrical parameters include a gate charge of 34 nC and input capacitance of 895 pF at 100V. Maximum power dissipation is 70W (Tc) with an operating junction temperature of 150°C. This component is suitable for applications in power supplies and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 895 pF @ 100 V |
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