STU9N65M2
MOSFET N-CH 650V 5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU9N65M2: This N-Channel MDmesh™ series MOSFET features a 650V drain-source voltage and 5A continuous drain current at 25°C (Tc). The device offers a maximum on-resistance of 900mOhm at 2.5A and 10V Vgs. It is designed for high efficiency applications with a maximum power dissipation of 60W (Tc). Key parameters include a gate charge of 10 nC @ 10V and input capacitance of 315 pF @ 100V. The STU9N65M2 is housed in a TO-251 (IPAK) package with through-hole mounting. This component is suitable for use in power factor correction, switch mode power supplies, and lighting applications.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 100 V |
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