STU9HN65M2
MOSFET N-CH 650V 5.5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STU9HN65M2 is an N-Channel Power MOSFET from the MDmesh™ M2 series, designed for high-voltage applications. This device features a 650 V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.5 A at 25°C (Tc). With a maximum power dissipation of 60 W (Tc), it is housed in a TO-251 (IPAK) through-hole package. Key electrical characteristics include a maximum on-resistance (Rds On) of 820 mOhm at 2.5 A and 10 V, and a gate charge (Qg) of 11.5 nC at 10 V. The input capacitance (Ciss) is 325 pF at 100 V. Operating temperatures can reach up to 150°C (TJ). This component is utilized in power supply units, lighting, and industrial applications requiring efficient power switching.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 820mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 100 V |
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