STU95N4F3
MOSFET N-CH 40V 80A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU95N4F3 is an N-Channel STripFET™ Power MOSFET. This component features a 40V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C (Tc). The Rds(on) is specified at a maximum of 6.5mOhm when driven at 40A and 10V Vgs. With a gate charge (Qg) of 54 nC at 10V and input capacitance (Ciss) of 2200 pF at 25V, this MOSFET is designed for efficient switching. The device offers a power dissipation of 110W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). The STU95N4F3 is housed in an IPAK package (TO-251-3 Short Leads, TO-251AA) for through-hole mounting. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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