STU95N2LH5
MOSFET N-CH 25V 80A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ V series N-Channel Power MOSFET, part number STU95N2LH5. This TO-251 (IPAK) packaged device features a 25V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc) with a maximum power dissipation of 70W (Tc). The MOSFET exhibits a low on-resistance of 4.9mOhm at 40A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 13.4 nC at 5V and input capacitance (Ciss) of 1817 pF at 25V. It is designed for through-hole mounting and operates within a temperature range of -55°C to 175°C (TJ). Applications include automotive and industrial power management systems.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1817 pF @ 25 V |
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