STU8NM50N
MOSFET N-CH 500V 5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU8NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 790mOhm at 2.5A and 10V Vgs. With a maximum power dissipation of 45W (Tc), it is designed for robust performance. Key parameters include a gate charge (Qg) of 14nC (max) at 10V and input capacitance (Ciss) of 364pF (max) at 50V. The STU8NM50N is housed in an IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) for through-hole mounting and operates at junction temperatures up to 150°C. This component is suitable for applications in power supply units and industrial automation.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 790mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 364 pF @ 50 V |
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