STU8N65M5
MOSFET N-CH 650V 7A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ V series N-Channel Power MOSFET, part number STU8N65M5. This device features a 650V drain-source breakdown voltage and a continuous drain current capability of 7A at 25°C. With a maximum on-resistance of 600mOhm at 3.5A and 10V gate-source voltage, it offers efficient switching performance. The STU8N65M5 is housed in a TO-251 (IPAK) package with through-hole mounting. Its maximum power dissipation is rated at 70W (Tc), and it operates at a junction temperature up to 150°C. Key parameters include a typical gate charge of 15nC and input capacitance of 690pF. This MOSFET is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 100 V |