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STU85N3LH5

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STU85N3LH5

MOSFET N-CH 30V 80A IPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STU85N3LH5 is an N-Channel STripFET™ V power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 70W (Tc). The low on-resistance of 5.4mOhm at 40A and 10V (Vgs) minimizes conduction losses. It offers a typical Gate Charge (Qg) of 14 nC at 5V and an Input Capacitance (Ciss) of 1850 pF at 25V. The STU85N3LH5 is housed in a TO-251 (IPAK) package, suitable for through-hole mounting and operating at junction temperatures up to 175°C. This device finds application in automotive and industrial power management systems.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs5.4mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±22V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1850 pF @ 25 V

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