STU80N4F6
MOSFET N-CH 40V 80A TO251Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU80N4F6 is a high-performance N-Channel MOSFET from the DeepGATE™, STripFET™ VI series. This component features a 40V Drain-Source Voltage (Vdss) and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 70W (Tc). The STU80N4F6 offers a low on-resistance of 6.3mOhm at 40A, 10V (Id, Vgs), and a typical gate charge of 36 nC at 10V (Vgs). Its input capacitance (Ciss) is rated at 2150 pF maximum at 25V (Vds). This through-hole device is packaged in a TO-251 (IPAK) with short leads and operates across a wide temperature range of -55°C to 175°C (TJ). Applications for this MOSFET include power management systems and automotive electronics.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V |
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