STU7N65M6
MOSFET N-CH 650V 5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STU7N65M6 is an N-Channel Power MOSFET from the MDmesh™ M6 series. This device features a Drain-Source Voltage (Vdss) of 650V and a continuous Drain current (Id) of 5A at 25°C (Tc). With a maximum Power Dissipation (Pd) of 60W (Tc), it is suitable for applications requiring robust switching performance. The Rds On (Max) is specified at 990mOhm at 2.5A and 10V. Key parameters include a Gate Charge (Qg) of 6.9 nC (Max) at 10V and Input Capacitance (Ciss) of 220 pF (Max) at 100V. The STU7N65M6 is provided in an IPAK (TO-251-3 Short Leads, TO-251AA) package for through-hole mounting. This component finds application in power supplies, industrial automation, and renewable energy systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ M6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 990mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.75V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 100 V |
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