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STU75N3LLH6-S

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STU75N3LLH6-S

MOSFET N-CH 30V 75A IPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STU75N3LLH6-S is an N-channel Power MOSFET from the DeepGATE™ and STripFET™ VI series. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 75A at 25°C (Tc). With a maximum on-resistance (Rds On) of 5.9mOhm at 37.5A and 10V Vgs, it offers low conduction losses. The STU75N3LLH6-S is rated for a maximum power dissipation of 60W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 17 nC at 4.5V Vgs and input capacitance (Ciss) of 1690 pF at 25V Vds. This component is housed in a TO-251 (IPAK) package with short leads. It finds application in various power management solutions, including automotive systems and industrial power supplies.

Additional Information

Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs5.9mOhm @ 37.5A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1690 pF @ 25 V

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