STU75N3LLH6
MOSFET N-CH 30V 75A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU75N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 60W (Tc). The low on-resistance of 5.9mOhm at 37.5A and 10V Vgs, coupled with a gate charge of 23.8 nC at 4.5V, makes it suitable for high-efficiency switching applications. The IPAK (TO-251) package with through-hole mounting and short leads facilitates integration into various PCB designs. Operating temperature range is -55°C to 175°C (TJ). This device is commonly found in automotive and industrial power management systems.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2030 pF @ 10 V |
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