STU6N65K3
MOSFET N-CH 650V 5.4A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU6N65K3 is a 650V N-Channel Power MOSFET from the SuperMESH3™ series, housed in a TO-251 (IPAK) package. This device offers a continuous drain current of 5.4A at 25°C (Tc) and a maximum power dissipation of 110W (Tc). Key electrical characteristics include a low on-resistance of 1.3Ohm (Max) at 2.7A, 10V and a gate charge (Qg) of 33nC (Max) at 10V. The input capacitance (Ciss) is 880pF (Max) at 50V. This component is suitable for applications requiring high voltage switching and efficient power conversion. It operates at an ambient temperature up to 150°C (TJ) and features a gate-source voltage range of ±30V.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 50 V |
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