STU6N60M2
MOSFET N-CH 600V 4.5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU6N60M2 is an N-channel Power MOSFET from the MDmesh™ II Plus series. This component offers a 600 V breakdown voltage and a continuous drain current of 4.5 A at 25°C, with a maximum power dissipation of 60 W. Featuring a low on-resistance of 1.2 O maximum at 2.25 A and 10 V gate drive, this device utilizes STMicroelectronics' advanced trench technology for enhanced performance. The STU6N60M2 is housed in a TO-251 (IPAK) package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 13.5 nC at 10 V and input capacitance (Ciss) of 232 pF at 100 V. Ideal for applications in power supply units, lighting, and motor control, its operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 232 pF @ 100 V |
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