STU65N3LLH5
MOSFET N CH 30V 65A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ V series N-Channel Power MOSFET, part number STU65N3LLH5. This through-hole device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 65A at 25°C. The STU65N3LLH5 offers a low on-resistance of 7.3mOhm maximum at 32.5A and 10V Vgs. Gate drive is specified from 4.5V to 10V, with a maximum gate-source voltage of ±22V. Key parameters include a maximum power dissipation of 50W (Tc) and a gate charge (Qg) of 8nC at 4.5V. The IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) is suitable for applications in automotive and industrial power management. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 32.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±22V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 25 V |
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