STU5N62K3
MOSFET N-CH 620V 4.2A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH3™ N-Channel Power MOSFET, part number STU5N62K3, offers a 620V drain-source breakdown voltage and a continuous drain current of 4.2A at 25°C (Tc). This device features a low on-resistance of 1.6 Ohms maximum at 2.1A, 10V, and a gate charge of 26 nC maximum at 10V. The STU5N62K3 is housed in a TO-251 (IPAK) package with through-hole mounting. With a maximum power dissipation of 70W (Tc) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in industrial power supplies and motor control.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 50 V |
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