STU5N60M2
MOSFET N-CH 600V 3.7A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU5N60M2 is an N-Channel Power MOSFET from the MDmesh™ II Plus series. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 3.7 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 1.4 Ohm maximum at 1.85 A and 10 V gate drive. With a maximum power dissipation of 45 W (Tc) and an operating junction temperature of 150°C, it is suitable for demanding applications. Key parameters include a typical gate charge of 4.5 nC at 10 V and input capacitance (Ciss) of 165 pF at 100 V. The STU5N60M2 is housed in an IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) designed for through-hole mounting. This MOSFET is commonly utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.85A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 100 V |
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