STU5N52K3
MOSFET N-CH 525V 4.4A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU5N52K3 is an N-Channel SuperMESH3™ Power MOSFET. This component features a drain-to-source voltage (Vdss) of 525 V and a continuous drain current (Id) of 4.4 A at 25°C. The device offers a maximum on-resistance (Rds On) of 1.5 Ohms at 2.2 A and 10 V gate-source voltage. With a maximum power dissipation of 70 W (Tc), it is housed in a TO-251 (IPAK) package suitable for through-hole mounting. Key parameters include a gate charge of 17 nC (max) at 10 V and input capacitance (Ciss) of 545 pF (max) at 100 V. This MOSFET is utilized in applications such as power supply units and industrial motor control.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |