STU4N80K5
MOSFET N-CH 800V 3A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STU4N80K5 is an N-channel SuperMESH5™ Power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 3 A at 25°C case temperature. The STU4N80K5 offers a low on-resistance (Rds On) of 2.5 Ohms maximum at 1.5 A and 10 V gate drive voltage. With a maximum power dissipation of 60 W (Tc), it is suitable for demanding power conversion tasks. The device is housed in a TO-251 (IPAK) package, facilitating through-hole mounting. Key parameters include a gate charge (Qg) of 10.5 nC maximum and input capacitance (Ciss) of 175 pF maximum. Operating temperature ranges from -55°C to 150°C. This component is utilized in power supplies, lighting, and industrial applications.
Additional Information
Series: SuperMESH5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
Request a Quote
Clients Also Buy
STF21N90K5
MOSFET N-CH 900V 18.5A TO220FP
STF13N80K5
MOSFET N-CH 800V 12A TO220FP
STD2N80K5
MOSFET N-CH 800V 2A DPAK
