STU3LN62K3
MOSFET N-CH 620V 2.5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU3LN62K3 is an N-Channel Power MOSFET from the SuperMESH3™ series. This device features a 620V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C (Tc). The STU3LN62K3 offers a maximum on-resistance (Rds On) of 3 Ohms at 1.25A and 10V, with a gate-source threshold voltage (Vgs(th)) of 4.5V at 50µA. Key parameters include input capacitance (Ciss) of 386pF at 50V and gate charge (Qg) of 17nC at 10V. With a maximum power dissipation of 45W (Tc), this MOSFET is housed in a TO-251 (IPAK) package with through-hole mounting. It is commonly utilized in power supply units, lighting applications, and motor control systems.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 386 pF @ 50 V |