STU27N3LH5
MOSFET N-CH 30V 27A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ V series STU27N3LH5 is an N-Channel Power MOSFET with a 30V drain-source breakdown voltage. It offers a continuous drain current of 27A at 25°C (Tc) and a maximum power dissipation of 30W (Tc). The device features a low on-resistance of 20mOhm maximum at 13.5A and 10V Vgs. It is available in a TO-251 (IPAK) through-hole package, suitable for demanding applications in automotive and industrial power management. Key parameters include a gate charge (Qg) of 4.6 nC typical at 5V Vgs and input capacitance (Ciss) of 475 pF maximum at 25V Vds. The operating temperature range is -55°C to 175°C.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±22V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 25 V |
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