STU1HN60K3
MOSFET N-CH 600V 1.2A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STU1HN60K3 is an N-Channel SuperMESH3™ Power MOSFET designed for high-voltage applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.2A at 25°C (Tc). With a maximum power dissipation of 27W (Tc), it offers a low on-resistance (Rds On) of 8 Ohm at 600mA and 10V gate-source voltage. The STU1HN60K3 utilizes Metal Oxide MOSFET technology and has a typical input capacitance (Ciss) of 140 pF at 50V. It is packaged in a TO-251 (IPAK) through-hole configuration, suitable for various industrial and power supply applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 50 V |
Request a Quote
Clients Also Buy
STQ2LN60K3-AP
MOSFET N-CH 600V 600MA TO92-3
STD3N62K3
MOSFET N-CH 620V 2.7A DPAK
STP5NK100Z
MOSFET N-CH 1000V 3.5A TO220AB
