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STU150N3LLH6

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STU150N3LLH6

MOSFET N-CH 30V 80A IPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STU150N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This through-hole component features a 30V drain-source voltage (Vdss) and handles a continuous drain current of 80A (Tc) at 25°C, with a maximum power dissipation of 110W (Tc). The STU150N3LLH6 offers a low on-resistance (Rds On) of 3.3mOhm at 40A and 10V. Key parameters include a gate charge (Qg) of 40 nC at 4.5V and input capacitance (Ciss) of 4040 pF at 25V. It operates across a wide temperature range, up to 175°C (TJ), and is packaged in a TO-251 (IPAK) form factor with short leads. This device is suitable for high-efficiency power conversion applications in automotive and industrial sectors.

Additional Information

Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs3.3mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)110W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4040 pF @ 25 V

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