STU13NM60N
MOSFET N-CH 600V 11A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STU13NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 11A at 25°C (Tc). With a maximum power dissipation of 90W (Tc) and a low on-resistance (Rds On) of 360mOhm at 5.5A and 10V, it is optimized for efficiency. The STU13NM60N boasts a gate charge (Qg) of 27nC at 10V and input capacitance (Ciss) of 790pF at 50V. It is housed in a TO-251 (IPAK) package with through-hole mounting and operates up to a junction temperature of 150°C. This component is suitable for applications in power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
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