STU13N65M2
MOSFET N-CH 650V 10A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STU13N65M2 is an N-channel MOSFET from the MDmesh™ M2 series, designed for high-voltage applications. This component features a 650V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C, with a maximum power dissipation of 110W. The STU13N65M2 offers a low on-resistance of 430mOhm at 5A and 10V, supported by a gate charge of 17nC and input capacitance of 590pF. It is packaged in a TO-251 (IPAK) through-hole configuration, suitable for demanding thermal management. This device is commonly utilized in power factor correction (PFC) stages and switch-mode power supplies (SMPS) across industrial and consumer electronics.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 100 V |
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