STU12N65M5
MOSFET N-CH 650V 8.5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU12N65M5, an N-Channel Power MOSFET from the MDmesh™ V series, offers a 650V drain-source voltage and a continuous drain current of 8.5A at 25°C. This component features a maximum on-resistance of 430mOhm at 4.3A and 10V Vgs, with a gate charge of 22nC at 10V. The input capacitance (Ciss) is 900pF at 100V. Designed for through-hole mounting, it is housed in a TO-251 (IPAK) package with a maximum power dissipation of 70W. The operating junction temperature is rated up to 150°C, with a ±25V maximum gate-source voltage. This device is suitable for applications in power supplies and industrial motor control.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
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