STU12N60M2
MOSFET N-CH 600V 9A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STU12N60M2 is a 600 V N-Channel Power MOSFET from the MDmesh™ M2 series. This device offers a continuous drain current of 9A (Tc) with a maximum power dissipation of 85W (Tc). Key electrical characteristics include a drain-source on-resistance (Rds On) of 450mOhm at 4.5A and 10V Vgs, and a gate charge (Qg) of 16 nC @ 10 V. The input capacitance (Ciss) is rated at 538 pF @ 100 V. Designed for through-hole mounting, it is packaged in a TO-251 (IPAK) configuration with short leads. This component is suitable for applications in power supplies, lighting, and industrial equipment. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±25V.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 538 pF @ 100 V |
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