STU10P6F6
MOSFET P-CH 60V 10A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STU10P6F6 is a P-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This through-hole component, packaged in a TO-251 (IPAK) case, offers a continuous drain current of 10A (Tc) and a drain-to-source voltage (Vdss) of 60V. With a maximum power dissipation of 35W (Tc) and an operating temperature of 175°C (TJ), it is suitable for demanding applications. Key parameters include a low on-resistance (Rds On) of 160mOhm at 5A, 10V, a gate charge (Qg) of 6.4 nC @ 10V, and input capacitance (Ciss) of 340 pF @ 48V. This device finds application in automotive and industrial power management systems.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 48 V |
Request a Quote
Clients Also Buy
STL6N3LLH6
MOSFET N-CH 30V POWERFLAT
STD10P6F6
MOSFET P CH 60V 10A DPAK
STL12P6F6
MOSFET P-CH 60V 4A POWERFLAT
