STU10NM65N
MOSFET N-CH 650V 9A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU10NM65N, an N-Channel Power MOSFET from the MDmesh™ II series, offers a 650V drain-source voltage (Vdss) and 9A continuous drain current (Id) at 25°C. This through-hole component, housed in an IPAK package (TO-251-3 Short Leads), features a maximum power dissipation of 90W (Tc) and an Rds On of 480mOhm at 4.5A, 10V. Key parameters include a gate charge (Qg) of 25 nC @ 10V and input capacitance (Ciss) of 850 pF @ 50V. Operating at temperatures up to 150°C (TJ), this device is suitable for applications in power factor correction, switch mode power supplies, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |