STU10N60M2
MOSFET N-CH 600V 7.5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STU10N60M2, an N-Channel Power MOSFET from the MDmesh™ II Plus series, offers a robust 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7.5A at 25°C (Tc). This device features a maximum power dissipation of 85W (Tc) and a low on-resistance (Rds On) of 600mOhm at 3A and 10V Vgs. With a typical input capacitance (Ciss) of 400pF at 100V Vds and a gate charge (Qg) of 13.5nC at 10V Vgs, it is suitable for applications requiring efficient switching. The TO-251 (IPAK) through-hole package facilitates straightforward integration into printed circuit boards. This component finds application in power factor correction (PFC) circuits, switch-mode power supplies (SMPS), and general-purpose high-voltage switching designs.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 100 V |
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