STT7P2UH7
MOSFET P-CH 20V 7A SOT23-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STT7P2UH7 is a P-Channel STripFET™ MOSFET designed for demanding applications. This device features a 20V drain-source breakdown voltage (Vdss) and can handle a continuous drain current of 7A (Tc) at 25°C, with a maximum power dissipation of 1.6W (Tc). The SOT-23-6 package offers a surface mount solution suitable for high-density board designs. Key electrical characteristics include a maximum on-resistance (Rds On) of 22.5mOhm at 3.5A and 4.5V Vgs, and a gate charge (Qg) of 22 nC at 4.5V Vgs. Input capacitance (Ciss) is rated at a maximum of 2390 pF at 16V Vds. The operating temperature range extends to 150°C (TJ). This component is commonly utilized in automotive, industrial, and consumer electronics power management circuits.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 3.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390 pF @ 16 V |
Request a Quote
Clients Also Buy
STD5N20LT4
MOSFET N-CH 200V 5A DPAK
STD30NF06LT4
MOSFET N-CH 60V 35A DPAK
STD140N6F7
MOSFET N-CH 60V 80A DPAK
