STT5N2VH5
MOSFET N-CH 20V SOT23-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STT5N2VH5 is an STripFET™ V series N-channel MOSFET designed for power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 5A at 25°C. The on-resistance (Rds On) is specified at a maximum of 30mOhm when driven at 2A with a 4.5V gate-source voltage (Vgs). Key parameters also include a maximum gate charge (Qg) of 4.6 nC at 4.5V Vgs and an input capacitance (Ciss) of 367 pF at 16V Vds. With a power dissipation of 1.6W (Tc), it is suitable for surface mount integration in compact designs. The STT5N2VH5 operates across a temperature range of -55°C to 150°C and is supplied in a SOT-23-6 package, available on tape and reel. This component finds utility in various industrial and consumer electronics sectors requiring efficient power control.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tj) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | SOT-23-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 367 pF @ 16 V |
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