STT4PF20V
MOSFET P-CH 20V 3A SOT-23-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STT4PF20V is a P-Channel STripFET™ II power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 3A (Tc) at 25°C. The Rds(On) is specified at a maximum of 110mOhm at 1.5A, 4.5V, with a threshold voltage (Vgs(th)) of 600mV (Min) at 250µA. It offers a low Gate Charge (Qg) of 7.8 nC (Max) at 4.5V and an Input Capacitance (Ciss) of 500 pF (Max) at 15V. The device is packaged in a SOT-23-6 surface mount configuration, rated for a maximum power dissipation of 1.6W (Tc) and an operating junction temperature of 150°C. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Tc) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | SOT-23-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 15 V |
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