STT3P2UH7
MOSFET P-CH 20V 3A SOT23-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STT3P2UH7 is a P-channel STripFET™ MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3A at 25°C. With a maximum power dissipation of 1.6W (Tc), it is suitable for demanding thermal environments. The device exhibits a low on-resistance (Rds On) of 100mOhm at 1.5A and 4.5V, with a gate-source threshold voltage (Vgs(th)) of 1V at 250µA. Drive voltages range from 1.8V to 4.5V. Key electrical characteristics include a gate charge (Qg) of 4.8 nC at 4.5V and input capacitance (Ciss) of 510 pF at 10V. The operating junction temperature is rated up to 150°C. Packaged in a SOT-23-6 footprint and supplied on tape and reel, this MOSFET is utilized across various industries including consumer electronics and industrial automation.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 10 V |
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