STSJ60NH3LL
MOSFET N-CH 30V 60A 8SOICManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STSJ60NH3LL is an N-Channel STripFET™ Power MOSFET designed for robust performance. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 60A at 25°C (Tc). The low on-resistance (Rds On) of 5.7mOhm is achieved at 7.5A and 10V Vgs. The STSJ60NH3LL offers a gate charge (Qg) of 24 nC at 4.5V and input capacitance (Ciss) of 1810 pF at 25V. With a maximum power dissipation of 3W (Ta) and 50W (Tc), it is suitable for demanding applications. The device is housed in an 8-SOIC-EP package (8-SOIC-EP) for surface mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized across various industries including automotive, industrial power supplies, and motor control.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC-EP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1810 pF @ 25 V |
Request a Quote
Clients Also Buy
STD5N20LT4
MOSFET N-CH 200V 5A DPAK
STD30NF06LT4
MOSFET N-CH 60V 35A DPAK
STD140N6F7
MOSFET N-CH 60V 80A DPAK
